Revolutionary Silicon Carbide Crystal Growth Technology

Cost Reduction

Reduces cost of 200mm and 300mm+ Silicon Carbide wafers by over 50% through super-efficient crystal growth process.

Capital Efficiency

CAPEX reduced by 60% versus current technology, enabling faster market deployment.

Superior Physical and Electronical Properties

Thermal Conductivity

Silicon Carbide's thermal conductivity is 490 W/m·K, over 300% higher than silicon (~150 W/m·K), enabling superior heat spreading.

Electrical Performance

High electrical insulation and signal integrity in Silicon Carbide enable significantly lower signal loss compared to traditional silicon.

Optical Properties

SiC has a unique combination of optical properties 1) Optical transparency over a wide spectral range, 2) High refractive index significantly increasing the field of view in AR lenses and 3) Hardness second to diamond for unmatched scratch resistant lenses.

Temperature Stability

Wide bandgap (~3.3 eV) enables operation at junction temperatures far beyond silicon's limits.

Mechanical Strength

Silicon carbide is 3x stiffer than silicon, offering better contact and less bending during operation.